Product
NEMST-2002系列
Plasma Cleaner
- High-Density Plasma Source (ICP): ~ion density about 1011~1013/cm3.
- Two Electrodes Design (ICP & Electric Field Enhanced Electrode).
- The Direction of Ion Mobility can be controlled.
- Deep Plasma Penetration: uniform plasma penetration for 300mm.
- Multiple Processing Gas Selectivity.
- Low Gas Flow Rate.
- 38 Operation Programs can be stored in memory.
- Operation Mode: manual or auto mode.
- Chamber Capability: 6~10 magazines in general cases or 10~15 tray carriers.
- High Automation and Operator Friendly Design.
- Apply to Non-Slotted or Slotted Magazines.
- Apply to 10~15 tray carriers.
- Multiple Processing Gases (Ar, O2, H2, mixed gas, etc.) can achieve the best surface cleaning and treatment effects.
- Physical, Chemical, or Physical/Chemical Mode Cleaning Method.
- Very High Cleaning Efficiency.
- Extremely High Cleaning Uniformity.
- In general, 20 BGA strips per magazine can be well conducted.
- In general, 20~40 Lead Frame strips per magazine can be well conducted.
- Very High UPH (In General, 480~1440 BGA strips/hr, Lead Frame strips/hr, or up to 10K 1.5” LCD Panel).
- Very Little Gas Consumption.
- Apply to Process before Die-bonding, Wire-bonding or Molding in IC Packaging or LED Packaging Applications.
- Wafer Cleaning.
- Suitable for Flip-Chip, PBGA, Window-BGA, Mini-BGA, Micro-BGA, QFN/MLP, TFBGA (Film-BGA), LFBGA, VBGA (EBGA), Pin BGA, QFN/MLP, TCP, PCB, COB, Cu L/F, Ag-Plating L/F, Fe L/F, MMC, SD, Micro-SD, etc.
- Apply to LCM Cleaning Process, especially before COF, COG, Tape Process.