NEMST-DP2002系列

Vertical Plasma Desmear Machine (High-Efficiency Type, 14/28/30PCS)

Special implovements for electrodes, materials and flow patterns and thus increases 2~3 times etching rate.
Unique Plasma Technology integrated with Inductively Coupling Plasma (ICP) and Hollow Cathode Plasma (HCP) design.
ICP & HCP are generated at the same time, and it can substantially increase the plasma density as well as the process speed.
By employing water-cooling electrodes, the resistance of electrode surface can remain the same and thus increases the process stability. Multiple Processing Gas Selectivity. Mutiple Easy-Maintain and Low-Maintenance-Cost Designs.
High Automation and Operator Friendly Design.
Dependant on the customer's requirements, the machine can be produced at some customized designs.
Stepwise processing is available.
Convenient Cart/Rack Loading/Unloading Improvements for electrodes, materials, and flow patterns and thus increase the 2~3 times

2~3 times etching rate comparing to traditional designs.
Shorten the plasma time to 1/2 ~ 1/3 and substantially increase the throughput. Very low processing temperatures thus decrease the risk of damage to the products and increase the reliability of the processes. High Plasma Desmear Uniformity.
Very High Plasma Desmear Efficiency.
Multiple Process Gathe etching rate comparedses Selectivity (CF4, O2, N2, Ar, H2, etc.), which are used to achieve the best surface treatment effects.
High Capability (14/28 panels, 510 mm x 610 mm or 56/112 panels, 200 mm x 250 mm / Rigid, Flex, Rigid-Flex Boards).

Etching / Desmear / Descum / Cleaning. Blind Vias and Through Holes Plasma Treatment. Interlayer Adhesion Promotion.
Resist / Emulsion Removal.
Surface Activation / Surface Roughness Improvement / Surface Modification.

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